Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-09-26
1997-04-15
Nguyen, Nam
Coating apparatus
Gas or vapor deposition
With treating means
118719, 118723ME, C23C 1600
Patent
active
056205228
ABSTRACT:
A microwave plasma generator, wherein permanent magnets 3 forms intense magnetic field exceeding an intensity of electron cyclotron resonance magnetic field at microwave exit 6a of a dielectric body in an electron heating space chamber, the intensity of the magnetic field formed by the permanent magnet decreases rapidly to the zero at a point 14 in the vicinity of the boundary of the electronic heating space camber 1 and a plasma generating space chamber 2, and accordingly, most of electrons can be absorbed into electrons to heat and form high energy electrons at a position 12a-12c in electron cyclotron resonance layer 12.
REFERENCES:
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5203960 (1993-04-01), Dandl
patent: 5266146 (1993-11-01), Ohno et al.
patent: 5292370 (1994-03-01), Tsai et al.
patent: 5389154 (1995-02-01), Hiroshi et al.
Journal of Vacuum Science Technology, vol. B9, No. 1, Jan./Feb. 1991, "Characterization of a Permanent Magnet Electron Cyclotron Resonance Plasma Source", Mantei et al, pp. 26-28.
Ichimura Satoshi
Iga Takashi
Natsui Ken'ichi
Sato Tadashi
Chang Joni Y.
Hitachi , Ltd.
Nguyen Nam
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