Microwave plasma film deposition system

Details Microwave plasma film deposition system Microwave plasma film deposition system

1989-07-25

1992-06-30

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

427 39, 427 451, C23C 1650

Patent

active

051253585

ABSTRACT:
A microwave plasma film deposition system comprises a waveguide for feeding microwaves through a microwave feeding window provided at one end of the waveguide, and a plasma cavity in communication with the other end of the waveguide and having a discharge gas inlet which is not in communication with the waveguide. The system further includes a specimen chamber which is in communication with the plasma cavity and which has a substrate setting rest therein and a material gas inlet, and a magnetic field applying device provided near the plasma cavity. Stable film deposition occurs because the plasma cavity is at the end of the waveguide which is remote from the microwave feeding window, whereby deposition on the microwave feeding window is prevented. Deposition on the microwave feeding window is further prevented by a ferromagnetic material which is placed around the waveguide and which reduces the strength of the magnetic field in the waveguide.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4610770 (1986-09-01), Saito et al.
patent: 4883686 (1989-11-01), Doehler et al.
patent: 4913928 (1990-04-01), Sugita et al.

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