Microwave plasma film deposition system

Details Microwave plasma film deposition system Microwave plasma film deposition system

1991-12-18

1993-01-19

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427571, 427575, C23C 1648, C23C 1650

Patent

active

051804360

ABSTRACT:
A microwave plasma film deposition system using the microwave plasma in a state in which a magnetic field is applied to a plasma cavity for generating the plasma. The microwave plasma film deposition system can stably deposit a metal thin film by separating an insulating window for supplying the microwave to the plasma cavity from a region to which the magnetic field is applied, limiting the form and the size of a waveguide and regulating the process conditions (mainly, the pressure of gases in the system).

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo
patent: 4610770 (1986-09-01), Saito
patent: 4877642 (1989-10-01), Gartner
patent: 4883686 (1989-11-01), Doehler

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