Microwave plasma etching machine and method of etching

Details Microwave plasma etching machine and method of etching Microwave plasma etching machine and method of etching

1987-11-03

1989-02-14

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156668, 156643, 118722, 118723, 118 501, 3191214, 20415743, 20419236, C23F 102

Patent

active

048044318

ABSTRACT:
A conventional microwave over has been modified such that it may be used for plasma etching and cleaning. Oxygen or Argon gas is introduced into a vacuum chamber (18) inside a conventional microwave oven (10) that has been modified to allow gas from a canister outside the microwave oven to pass through the rear wall of the microwave oven into the vacuum chamber (18). A rotating antenna (16) ignites the gas to produce a uniform plasma which etches the substrate (28). Reaction by products are evacuated from the vacuum chamber by a vacuum pump positioned outside the microwave oven (10). The intensity of the microwaves can be adjusted for plasma etching via a maximum power control device which has been added to the electronic control circuit of the microwave oven. In addition, a vacuum chamber with a water cooling feature is provided to prevent thermal damage to the substrate during plasma processing.

REFERENCES:
patent: 3935371 (1976-01-01), Camacho et al.
patent: 4149923 (1979-04-01), Uehara et al.
patent: 4224897 (1980-09-01), Dugdale
patent: 4328258 (1982-05-01), Coleman
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4397885 (1983-08-01), Akai et al.
patent: 4448149 (1984-05-01), Brown Jr. et al.
patent: 4526805 (1985-07-01), Yoshizawa
patent: 4630568 (1986-12-01), Kieser
patent: 4718974 (1988-01-01), Minall

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