Microwave plasma etching apparatus

Details Microwave plasma etching apparatus Microwave plasma etching apparatus

1996-10-29

1999-11-16

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 118723MR, 118723MA, 156345, C23C 1600

Patent

active

059838299

ABSTRACT:
A plasma process apparatus comprises a plasma process chamber, substrate-to-be-processed supporting means for supporting a substrate to be processed, provided in the process chamber, gas introducing means, gas evacuation means, microwave introducing means using an endless circular waveguide having a plurality of slots arranged around the process chamber, and radio frequency power supplying means for supplying radio frequency power to the substrate supporting means. The above arrangement permits a uniform plasma to be generated in high density and in a large area even under the low-pressure condition of about 1 mTorr without using a magnetic field, thus enabling etching of large-area substrates in super fine patterns and at high speed.

REFERENCES:
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5310426 (1994-05-01), Mori
patent: 5366586 (1994-11-01), Samukawa
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5487875 (1996-01-01), Suzuki
patent: 5538699 (1996-07-01), Suzuki
patent: 5585148 (1996-12-01), Suzuki et al.

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