Microwave plasma CVD apparatus with a deposition chamber having

Details Microwave plasma CVD apparatus with a deposition chamber having Microwave plasma CVD apparatus with a deposition chamber having

1994-06-07

1996-05-07

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118718, 118719, 118723MA, 118723ME, C23C 1600

Patent

active

055142176

ABSTRACT:
An apparatus for continuously forming a functional deposited film on a continuously moving web member by microwave plasma CVD process, said apparatus comprises: a substantially enclosed columnar film-forming chamber having a curved circumferential wall formed by curving and projecting said web member as said web member is moving in the longitudinal direction by curved portion-forming means, said film-forming chamber having a film-forming space defined by a curved moving web member constituting said circumferential in which plasma is generated; at least a microwave applicator means capable of radiating a microwave energy in the direction of microwave to propagate, said microwave applicator means being mounted to said film forming chamber through one of the two side faces thereof such that part of said microwave applicator means is plunged into said film-forming space, at least said part of microwave applicator means having a dielectric exterior constituted by a dielectric material having a value of 2.times.10.sup.-2 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;means for evacuating said film-forming chamber; means for introducing a film-forming raw material gas into said film-forming chamber; and a temperature controlling means.

REFERENCES:
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4265932 (1981-05-01), Peters
patent: 4400409 (1983-08-01), Izu et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4517223 (1985-05-01), Ovshinsky et al.
patent: 4521717 (1985-06-01), Kieser
patent: 4619729 (1986-10-01), Johncock et al.
patent: 4729341 (1988-03-01), Fournier et al.
patent: 4785763 (1988-11-01), Saitoh
patent: 4909184 (1990-03-01), Fujiyama
patent: 4913928 (1990-04-01), Sugita et al.
patent: 4931756 (1990-06-01), Doehler et al.
patent: 4995341 (1991-02-01), Matsuyama
patent: 5074985 (1991-12-01), Tamura et al.
patent: 5114770 (1992-05-01), Echizen et al.
"The performance of a microwave ion source immersed in a multicusp static magnetic field" by M. Dahimene et al.; Journal of Vaccum Science & Technology Second Series, vol. 4, No. 1 Jan./Feb. 1986 pp. 126-130.
"Low temperature oxidation of silicon using a microwave plasma disk source" by T. Roppel et al.; Journal of Vacuum Science & Technology; Second Series, vol. 4, No. 1 Jan./Feb. 1986 pp. 295-298.

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