Microwave plasma CVD apparatus comprising dual plungers for two-

Coating apparatus – Gas or vapor deposition – With treating means

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156DIG68, C23C 1650

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active

052923711

ABSTRACT:
A microwave plasma chemical vapor deposition apparatus allows the position of a plasma to be two-dimensionally adjusted in a reaction tube. A second plunger 9 (plunger assembly 8) is disposed on an H plane of a microwave waveguide 2a connected to a microwave oscillator 1 adjacent to an end 2b of the microwave waveguide 2a in facing relationship to a reaction region 7. The plunger 9 is actuated to move the plasma also in a direction perpendicular to the direction of travel of a microwave in the microwave waveguide 2a for two-dimensionally adjusting the position of the plasma. Using the microwave plasma chemical vapor deposition apparatus, a diamond film having a uniform quality and a uniform thickness is formed as on a substrate.

REFERENCES:
patent: 4065369 (1977-12-01), Ogawa et al.
patent: 5078823 (1992-01-01), Chollet et al.
Moisan et al, "The Waveguide surfatron: a high power surface-wave launcher to sustain large-diameter dense plasma columns", J. Phys. E. Sci. Instrum, vol. 20, pp. 1356-1361, 1987.

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