Microwave plasma CVD apparatus comprising coaxially aligned mult

Details Microwave plasma CVD apparatus comprising coaxially aligned mult Microwave plasma CVD apparatus comprising coaxially aligned mult

1993-12-28

1995-08-22

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Running length work

118723MW, 118723ME, 118730, 118715, C23C 1650

Patent

active

054436451

ABSTRACT:
A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.

REFERENCES:
patent: 4499853 (1985-02-01), Miller
patent: 4566403 (1986-01-01), Fournier
patent: 4834023 (1989-05-01), Saitoh et al.
patent: 4951602 (1990-08-01), Kanai
patent: 4995341 (1991-02-01), Matsuyama
patent: 5129359 (1992-07-01), Takei et al.

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