Microwave plasma chemical vapor deposition apparatus with magnet

Details Microwave plasma chemical vapor deposition apparatus with magnet Microwave plasma chemical vapor deposition apparatus with magnet

1988-06-17

1990-04-03

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

118723, C23C 1650

Patent

active

049139282

ABSTRACT:
In the microwave plasma CVD apparatus according to the present invention, magnets are disposed at the outer circumference of the microwave introduction section thereby forming the magnetic field in the same direction as the direction of introducing the microwave to thereby prevent film deposition to the microwave introduction window. By the apparatus according to the present invention: (1) Microwave can be supplied to the inside of the vacuum chamber always under stabilized state, and (2) the maintenance frequency for the microwave introduction window of the microwave CVD apparatus can be increased.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo
patent: 4481229 (1984-11-01), Suzuki
patent: 4532199 (1985-07-01), Ueno
Ono, Jap. Journal of App. Phys., vol. 23, No. 8, Aug. 1984, pp. L534-L536.

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