Microwave plasma chemical vapor deposition apparatus for mass-pr

Details Microwave plasma chemical vapor deposition apparatus for mass-pr Microwave plasma chemical vapor deposition apparatus for mass-pr

1990-01-25

1990-11-27

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118729, 118730, 118733, 118 501, C23C 1650

Patent

active

049727990

ABSTRACT:
In a microwave plasma chemical vapor deposition apparatus which comprises a substantially enclosed deposition chamber, a means for supporting a substrate on which a functional deposited film is to be formed, a means for supplying raw material gases, a means for evacuating the inside of said deposition chamber and a means for generating microwave discharge plasmas in said deposition chamber which includes a waveguide extending from a microwave power source and a microwave introducing window through which a microwave energy is to be introduced into said deposition chamber, the improvement characterized in that said apparatus is provided with a holding member capable of holding said microwave introducing window and said substrate and capable of sealing said deposition chamber in a air-tight state upon film-formation and said apparatus is provided with a means for transporting said holding member under vacuum condition.

REFERENCES:
patent: 4666734 (1987-05-01), Kamiya
patent: 4840139 (1989-06-01), Takei

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