Microwave plasma chemical vapor deposition apparatus comprising

Details Microwave plasma chemical vapor deposition apparatus comprising Microwave plasma chemical vapor deposition apparatus comprising

1991-03-06

1993-08-10

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118730, 156DIG68, C23C 1650

Patent

active

052345025

ABSTRACT:
A chemical vapor deposition apparatus deposits a thin film on a substrate according to a chemical vapor deposition method by using plasma energy and reaction gas. The chemical vapor deposition apparatus comprises at least a reaction tube, a waveguide and a substrate holder. The reaction tube is inserted through the waveguide to thereby form a reaction vessel. The reaction tube is connected with a reaction gas source, and reaction gas is introduced into the reaction tube. The substrate holder is placed at an area in which the reaction tube and the waveguide intersect. The substrate holder provides a rotation axis for rotating the substrate, and the waveguide is provided such that a center axis thereof is inclined in relation to a center axis of the substrate holder. In addition, the substrate holder can be freely rotated around the center axis thereof. By rotating the substrate so that a plasma is generated at the position opposite to and inclined against the substrate, all portions of the substrate are heated uniformly. Thus, a thin film having uniform thickness can be deposited over the entire surface of the substrate.

REFERENCES:
patent: 4785763 (1988-11-01), Saitoh
patent: 4818561 (1989-04-01), Strahl
patent: 4946537 (1990-08-01), Hijikata et al.
patent: 5130111 (1992-07-01), Pryor
"Texture of Vapor Deposited Diamond Films as Revealed by Plasma-Etching", by Hata, Chiemi et al., Science and Technology of New Diamond, KTK Scientific Publishers, Terra Scientific Publishing Company, 1990, pp. 95-100.
"Emerging Technology of Diamond Thin Films", May 15, 1989, C&EN.

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