Coating apparatus – Gas or vapor deposition – With treating means
Patent
1991-08-30
1992-03-31
Beck, Shrive
Coating apparatus
Gas or vapor deposition
With treating means
427 39, 427 451, 427 47, C23C 1650
Patent
active
050997904
ABSTRACT:
In a microwave plasma CVD apparatus in which material gas is formed into plasmas by electric discharge of microwaves in a plasma generating chamber provided with a first magnetic field generating device introduced into a deposition chamber and reacted with starting material gas introduced in the deposition chamber, to form a deposited film on a substrate, a second magnetic field generation device is situated at the rear side of a substrate table disposed in the deposition chamber with one of the magnetic poles thereof being faced to the magnetic pole, at the opposite polarity, of the first magnetic field generating device situated on the side of the deposition chamber, so that the time-averaged magnetic flux density is made uniform on the surface of the specimen substrate, thereby making the plasma density more uniform on the substrate and making the distribution of the deposited film thickness more uniform.
REFERENCES:
patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4740268 (1988-04-01), Bukhman
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4842707 (1989-06-01), Kinoshita
Beck Shrive
Canon Kabushiki Kaisha
Owens Terry J.
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