Microwave PCVD method for continuously forming a large area func

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 451, 4272555, 427314, 427322, B05D 306

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051301709

ABSTRACT:
A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation, to thereby generate plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuoulsy moving circumferential wall which is exposed to said plasma.

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patent: 4729341 (1988-03-01), Fournier et al.
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patent: 4893584 (1990-01-01), Doehler et al.
patent: 4995341 (1991-02-01), Matsuyama
"The performance of a microwave ion source immersed in a multicusp static magnetic field" by M. Dahimene et al. Journal of Vacuum Science Technology, B, vol. 4, No. 1, Jan./Feb. 1986 pp. 126-130.
"Low Temperature oxidation of silicon using a microwave plasma disk source" by T. Roppel et al. Journal of Vacuum Science Technology, B, vol. 4, No. 1 Jan./Feb. 1986 pp. 295-298.

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