Oscillators – With distributed parameter resonator – Parallel wire type
Patent
1991-04-15
1992-05-19
Grimm, Siegfried H.
Oscillators
With distributed parameter resonator
Parallel wire type
331 66, 331117D, 331117FE, 374183, H03B 518, G01K 700
Patent
active
051152100
ABSTRACT:
An ambient condition sensor is embodied in an oscillator which generates an output signal having a frequency which is proportional to the ambient condition of the environment in which it is located. The oscillator includes a ring resonator consisting of a metallic ring located in the output plane of a grounded source gallium arsenide MESFET type transistor oscillator formed on a temperature sensitive dielectric substrate. The circumference of the ring is directly related to the ring resonator's resonant frequency. More particularly, the circumference of the ring is a multiple of the wavelength of the oscillator's output signal. Such a device permits unmanned, remote and inexpensive temperature sensing in places generally unsuited for operator presence.
REFERENCES:
patent: 4185252 (1980-01-01), Gerlach
patent: 4749963 (1988-06-01), Makimoto et al.
GaAs MESFET Circuit Design, R. Soares, pp. 361-375, Artech House, Inc., 1. 8
A Highly-Stable 36 GHz GaAs FET DRO with Phase-Lock Capability, A.P.S. Khanna et al., Microwave Journal, Jul. 1989, pp. 117-122.
Cadotte, Jr. Roland
Cummings Michael
Rachlin Adam
Anderson William H.
Grimm Siegfried H.
The United States of America as represented by the Secretary of
Zelenka Michael
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