Oscillators – With distributed parameter resonator
Patent
1989-06-05
1990-08-07
Mis, David
Oscillators
With distributed parameter resonator
331115, 357 51, H03B 518, H03B 714
Patent
active
049471384
ABSTRACT:
In a microwave oscillator device, wires (1,2,3 etc) form inductors in a feedback path between a control electrode (e.g. gate) and a second main electrode (e.g. source) of a transistor (e.g. a GaAs MESFET). The transistor body (10) is mounted within an insulating surround 25, on a base 21 providing a first device terminal. The connection to the second main electrode comprises in series at least first and second lengths (1,2) of wire, whereas the connection to the control electrode comprises a third length (3) of wire. The invention permits the construction of a mechanical and electrical replacement for a Gunn diode by compressing the wire lengths (1,2,3 etc) in a particular arrangement into the small space inside a conventional Gunn diode envelope (20). The first wire length (1) and possibly more lengths are arched onto a low bonding area (15,16,17) adjacent the base (21), whereas the second and third wire lengths extend upto an upper bonding area (23) adjacent the top of the surround (25) and connected to the second terminal ( 22). The resulting inductance of the connection (1,2, and possibly 4) between the second main electrode and the second terminal (22) is higher than the inductance of the connection (3) between the control electrode and the second terminal (22), which provides an impedance level equivalent to that of the Gunn diode which the device replaces.
REFERENCES:
patent: 4768079 (1988-08-01), Kandpal et al.
patent: 4841353 (1989-06-01), Wada et al.
Lobato Emmanuel J.
Mis David
U.S. Philips Corp.
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