Coating apparatus – With vacuum or fluid pressure chamber – With means to apply electrical and/or radiant energy to work...
Patent
1985-11-15
1986-12-23
Page, Thurman K.
Coating apparatus
With vacuum or fluid pressure chamber
With means to apply electrical and/or radiant energy to work...
118620, 118621, 118623, 118729, 118730, 31511141, 31511181, C23C 1308, H01J 746
Patent
active
046305661
ABSTRACT:
A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
REFERENCES:
patent: 3757733 (1973-09-01), Reinberg
patent: 4440108 (1984-04-01), Little et al.
patent: 4461237 (1984-07-01), Hinkel et al.
patent: 4487162 (1984-12-01), Cann
patent: 4511593 (1985-04-01), Brandolf
patent: 4512867 (1985-04-01), Andreev et al.
patent: 4539068 (1985-09-01), Takagi et al.
Sze, S. M., VLSI Technology, McGraw Hill, New York (1983).
Suzuki, K. S., et al., Microwave Plasma Etching, 16, 1979-1984 (1977).
Suzuki, K. S., et al., Proc. Int'l Ion Engineering Congress ISIAT 1983 & IPAT 1983, 1645-1656 (1983).
Hitachi, Electronics, p. 63, Nov. 20, 1980.
MacDonald, A. D., et al., Gaseous Electronics, vol. I, (1978).
Ligenza, J. R., J. Appl. Phys., 36,2703-2707 (1965).
Gourrier, S., et al., Plasma Chemistry and Plasma Proc., 1, 217-232, 1981.
Katz, L. E., VSLI Tech., Chapt. 4, S. M. Sze, editor, Wiley, N.Y. 1983.
Ho, et al., IEEE Tran. Elect. Dev., ED-27, 1436-1443, (1980).
Weinreich, O. A., J. Appl. Physics, 37, 2924, (1966).
Chang, et al., Appl. Phys. Lett, 29, 56-58, (1976).
Sugono, et al., IEEE Tran. Elect Dev., ED-27, 449-455, (1980).
Yokoyoma, N., et al., Plasma GaAs MOSFET integrated Logic, ED-27, 1124-1128, (1980).
Weider, H. H., J. Vac. Sci. Technol., 18, 827-837, (1981).
Lile, D. L., et al., Electron. Lett., 14, 657-659, (1978).
Henry, L., et al., Electron. Lett., 18, 102-103, (1982).
Kanazawa, H., et al., Japanese J. Appl. Phys., 20, L211-L213, (1981).
Colburn, J. W., et al., J. Vac. Sci. Technol., 16, 391-403, (1979).
Elliot, D. J., Integrated Circuit Tech., Chapter 11, McGraw-Hill, 1982.
Lin, I., et al., Appl. Phys. Lett., 44, 185-187, (1981).
Bollinger, L. D. et al., Solid State Technol. 26, 99-108, Jan. 1983.
Geis, M. W., et al., J. Vac. Sci. Technol. 19, 1390-1393, (1981).
Chinn, et al., J. Vac. Sci. Technol., Al, 701-704, (1983).
Chinn, et al., Appl. Phys. Lett, 43, 185-187, (1983).
Minkiewicz et al., Appl. Phys. Lett. 34, 192 (1979).
Mantei, T. D. et al., Appl. Phys. Lett. 43, 84 (1983).
Loncar, G., et al., Czech. J. Phys. B30, 688-707, (1980).
Lisitano, G., et al., Appl. Physics Lett. vol. 16, 122-124 (1970).
Asmussen Jes
Reinhard Donnie K.
Board of Trustees operating Michigan State University
McLeod Ian C.
Page Thurman K.
LandOfFree
Microwave or UHF plasma improved apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microwave or UHF plasma improved apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave or UHF plasma improved apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-166191