Microwave monolithic integrated circuit with heat radiating elec

Details Microwave monolithic integrated circuit with heat radiating elec Microwave monolithic integrated circuit with heat radiating elec

1988-09-30

1990-09-11

Hille, Rolf

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 55, 357 65, 357 71, 357 68, 361386, 165 802, 165 803, H01L 2302

Patent

active

049566970

ABSTRACT:
A microwave monolithic integrated circuit comprising a GaAs substrate having upper and lower opposed surfaces, an active region and at least one passive region produced on the upper surface of the substrate, and a heat sink produced on the lower surface of the substrate, wherein the substrate thickness beneath the active region is smaller than the substrate thickness beneath at least one passive region, thereby disposing the heat sink near the active region to improve heat dissipation therefrom. The active region and the passive regions are separated by intermediate areas and the substrate thickness beneath the intermediate areas is smaller than the substrate thickness beneath the active region such that the heat sink at least partially surrounds the substrate beneath the active region. Each passive region is associated with a respective microwave transmission line having a predetermined width and a desired characteristic impedance and the thickness of the substrate beneath each of the passive regions is established individually based on the width and the desired characteristic impedance of each respective microwave transmission line.

REFERENCES:
patent: 3986196 (1976-10-01), Decker et al.
"A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure" IEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 3, Mar. 1984, at pp. 309-316.
"A K-Band GaAs FET Amplifier with 8.2-W Output Power", IEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 3, Mar. 1984 at pp. 317-324.

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