Microwave monolithic integrated circuit package with improved RF

Details Microwave monolithic integrated circuit package with improved RF Microwave monolithic integrated circuit package with improved RF

1995-01-31

1997-02-11

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257664, 257730, H01L 2940, H01L 2334, H01L 2304

Patent

active

056024215

ABSTRACT:
A mounting and protective package for a monolithic microwave integrated circuit die (16) operable in the K.sub.a -band is formed of two high temperature co-fired ceramic layers sandwiched by two metal layers (10,12,20,26) that minimize hermetic sealing problems. The package has high frequency input/output lines (40,42), each including a section defining a microstrip line (40a,41a), a section defining a shielded strip line (40b,41b), and a section defining a capacitor (40c, 41c) . The capacitor is precisely defined to provide optimum input/output transmission line impedance that minimizes loss. The integrated circuit die (16) is mounted within a recess (14,46) in the package and is wire bonded (22,24) to input and output capacitors (40c,41c) that in turn are connected with shielded strip lines (40b,41b) and microstrip lines (40a,41a) for both input and output. An unique configuration and location of conductive material filled vias (48a-48l, 63a-63l) interconnect a metallized base and a metallized lid of the package to define a resonant cavity that eliminate resonant or moding problems from 26-36 GHz operation.

REFERENCES:
patent: 4783697 (1988-11-01), Benenati et al.
patent: 5117068 (1992-05-01), Seieroe et al.
patent: 5465008 (1995-11-01), Goetz et al.

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