Patent
1987-12-14
1989-09-19
Clawson, Jr., Joseph E.
357 22, 357 34, 357 51, 357 49, 357 55, 357 58, H01L 29161
Patent
active
048686131
ABSTRACT:
A microwave monolithic integrated circuit (MMIC) device includes a transistor and a capacitor respectively formed on the same semiconductor substrate. The transistor has at least one high resistivity semiconductor layer which forms a heterojunction with an activating layer or the semiconductor substrate. The capacitor has a dielectric layer formed by the high resistivity semiconductor layer of the transistor.
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Applied Physics Letters, vol. 42, No. 9, May 1, 1983, "Electrical Measurements on N+-GaAs-Undoped Ga0.6A10.4As-n-GaAs Capacitors", Solomon et al., pp. 821-823.
IEEE 1983 International Symposium on Circuits and Systems, Newport Beach, Ca., vol. 1 or 3, May 2-4, 1983, "Monolithic Microwave Integrated Circuits Fad or Fact", by Decker, pp. 413-417.
International Electron Devices Meeting 1983, Washington, D.C., Dec. 5-7, 1983, "Double Heterojunction GaAs-GaAlAs Bipolar Transistors Grown by MOCVD for Emitter Coupled Logic Circuits", by Dubon et al., pp. 689-691.
IEEE Electron Device Letters, vol. EDL-5, No. 8, Aug. 1984, "GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers", by Asbeck et al., pp. 310-312.
Clawson Jr. Joseph E.
Fujitsu Limited
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