Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1983-04-22
1985-06-25
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330294, H03F 3193, H03F 360
Patent
active
045256802
ABSTRACT:
An RF MESFET amplifier having a feedback resistor further incorporates two sets of quarter wavelength low impedance pads and quarter wavelength high impedance lines in the resistor feedback path. These RF impedance elements prevent RF feedback as well as thermal noise generated by the feedback resistor from being coupled to the input. Moreover, they effectively isolate RF interaction between the drain and gate of the MESFET; as a result, the amplifier has excellent stability. The low impedance quarter wavelength pads serve as an RF bypass (to ground), while the high impedance quarter wavelength lines provide high attenuation near frequencies at the given wavelength. Consequently, thermal noise generated by the feedback resistor will be bypassed to ground and will not leak into the gate. The value of the feedback resistor can be selected and optimized to obtain the desired VSWR, bandwidth and gain flatness.
REFERENCES:
Morino et al., "Semiconductor Devices and Circuit Components," NEC Research & Development, No. 57, Apr. 1980, pp. 119-129.
Pengelly, "Application of Feedback Techniques to the Realization of Hybrid and Monolithic Broad Band Low-Noise and Power GaAs FET Amplifiers", Electronics Letters, Oct. 15, 1981, V. 17, No. 21, pp. 798, 799.
Pan Jing-Jong
Wilson John B.
Harris Corporation
Mullins James B.
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