Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source
Patent
1989-03-15
1991-10-01
LaRoche, Eugene R.
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Electron or ion source
31511121, 31511131, 31511141, 31323131, 250423R, 20429838, H01J 2718
Patent
active
050536788
ABSTRACT:
A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.
REFERENCES:
patent: 3137801 (1964-06-01), Brooks et al.
patent: 3740554 (1973-06-01), Morgan, Jr.
patent: 3778656 (1973-12-01), Fremiot et al.
patent: 3789414 (1974-01-01), Bauer et al.
patent: 4316090 (1982-02-01), Sakudo et al.
patent: 4393333 (1983-07-01), Sakudo et al.
patent: 4409520 (1983-10-01), Koike et al.
patent: 4543465 (1985-09-01), Sakudo et al.
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4598231 (1986-07-01), Matsuda et al.
patent: 4611121 (1986-09-01), Miyamura et al.
patent: 4629930 (1986-12-01), Sakudo et al.
patent: 4658143 (1987-04-01), Tokiguchi et al.
patent: 4713585 (1987-12-01), Ohno et al.
patent: 4739169 (1988-04-01), Kurosawa et al.
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4788473 (1988-11-01), Mori et al.
patent: 4857809 (1989-08-01), Torii et al.
patent: 4883968 (1989-11-01), Hipple et al.
patent: 4911814 (1990-03-01), Matsuoka et al.
The Review of Scientific Instruments, vol. 19, No. 12, Dec. 1945, pp. 905-910; R. N. Hall: "High Frequency Proton Source".
N. Sakudo, "Microwave Ion Source for Ion Implantation", Nuclear Instruments and Methods in Physics Research, B21 (1987), pp. 168-177.
Ishikawa et al., "Axial Magnetic Field Extraction-Type Microwave Ion Source with a Permanent Magnet", Rev. Sci. Instrum. 55(4), Apr. 1984 pp. 449-456.
Amemiya Kensuke
Koike Hidemi
Sakudo Noriyuki
Seki Takayoshi
Tokiguchi Katsumi
Hitachi , Ltd.
LaRoche Eugene R.
Yoo Do Hyun
LandOfFree
Microwave ion source does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microwave ion source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave ion source will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1757365