Microwave integrated distributed amplifier with field emission t

Amplifiers – With distributed parameter-type coupling means – Distributed amplifier

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313309, H03F 360

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active

047806842

ABSTRACT:
The disclosed microwave distributed amplifier includes a plurality of cascaded field emission triodes, each having a field emission element for emitting electrons, a grid disposed downstream from the field emission element along the electron flow path and an anode disposed further downstream along the electron flow path. A series of inductive strips interconnect successive grids to form a grid transmission line, while another series of inductive strips interconnect successive anodes to form an anode transmission line. Small electron transit times over integrated circuit distances in a vacuum environment and low interelectrode capacitance allow extremely large gain-bandwidth products to be achieved.

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patent: 3755704 (1973-08-01), Spindt et al.
E. L. Ginzton et al., "Distributed Amplification", Proceedings of the I.R.E., Aug. 1984, pp. 956-969.
Y. Ayasli et al., "A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, No. 7, Jul. 1982, pp. 976-981.
Y. Ayasli, "An Overview of Monolithic GaAs MESFET Traveling-Wave Amplifiers", International Journal of Electronics, 1985, vol. 58, No. 4, pp. 531-541.
C. A. Spindt, "A Thin-Film Field-Emission Cathode", Journal of Applied Physics, vol. 39, No. 7, Jun. 1968, pp. 3504-3505.
C. A. Spindt et al., "Physical Properties of Thin-Film Field Emission Cathodes with Molybdenum Cones", Journal of Applied Physics, vol. 47, No. 12, Dec. 1976, pp. 5248-5263.
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