Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-01-03
1996-09-24
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257277, 257482, 257523, 257532, 257614, 257622, 257655, H01L 3100
Patent
active
055593593
ABSTRACT:
A passive element structure and method for a microwave integrated circuit reduces signal propagation losses. In one approach, a passive element (10) has an insulating layer (12) overlying a silicon substrate (14). A metal layer (16) comprising a signal line (18) and a groundplane (20) is disposed overlying the insulating layer (12), and at least a portion of the metal layer (16) contacts the substrate (14) through at least one opening (22, 24) in the insulating layer (12). The silicon substrate (14) has a resistivity greater than 2,000 ohm-cm, and the passive element (10) preferably carries signals having frequencies greater than 500 MHz. Signal losses in the passive element (10) are minimized because the charge density at the surface (15) of the substrate (14) underlying the metal layer (16) is significantly reduced. In one example, the passive element (10) is a coplanar waveguide transmission line.
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Reyes et al., "Silicon as a Microwave Substrate", Microwave Theory and Techniques Symposium Digest, vol. 3, May 23-27, 1994, pp. 1759-1762.
Neel Bruce T.
Wojciechowicz Edward
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