Microwave integrated circuit having a level shift circuit

Details Microwave integrated circuit having a level shift circuit Microwave integrated circuit having a level shift circuit

1989-10-13

1991-01-22

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330310, H03F 316

Patent

active

049873822

ABSTRACT:
A microwave integrated circuit having a level shift circuit includes level shift diodes connected in series, a transistor resistor connected to form a two-terminal device which serves as a resistance, a field effect transistor and a series resonant circuit. The field effect transistor may be a GaAs field effect transistor and has a gate electrode receiving an input signal having frequency ranges from D.C. to super high frequencies, a drain electrode connected to the drain voltage line and a source electrode connected, through the series connection of the level shift diodes, to the transistor resistor and an output terminal. The series resonant circuit comprises a peaking capacitance and a peaking inductance and is provided in parallel with the level diodes. The series resonant circuit connected in parallel with the level shift diodes enables to reduce the device area for the level shift circuit and improves high frequency characteristics thereof.

REFERENCES:
patent: 4612514 (1986-09-01), Shigaki et al.
patent: 4881046 (1989-11-01), Tung

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