Microwave integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means

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Details

257593, 257664, H01L 29417, H01L 2973

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active

059863250

ABSTRACT:
The present invention provides a microwave integrated circuit device in which a sufficiently large gain can be obtained even in a high-frequency region by effectively reducing a ground inductance of a transistor. The device includes both a semiconductor substrate on which a bipolar transistor is formed and a microstrip line formed on the semiconductor substrate. The microstrip line is constituted of a grounded conductive layer, which is electrically connected to both ends of a base electrode, and input and output signal lines connected to emitter and collector electrodes of the transistor, respectively.

REFERENCES:
patent: 5384486 (1995-01-01), Konno
Ikuro Aoki, et al., "80GHz AlGaAs HBT Oscillator" IEEE GaAs IC Symposium Digest, pp. 281-284, 1996.

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