Microwave integrated circuit device

Details Microwave integrated circuit device Microwave integrated circuit device

1997-08-26

1999-11-16

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257593, 257664, H01L 29417, H01L 2973

Patent

active

059863250

ABSTRACT:
The present invention provides a microwave integrated circuit device in which a sufficiently large gain can be obtained even in a high-frequency region by effectively reducing a ground inductance of a transistor. The device includes both a semiconductor substrate on which a bipolar transistor is formed and a microstrip line formed on the semiconductor substrate. The microstrip line is constituted of a grounded conductive layer, which is electrically connected to both ends of a base electrode, and input and output signal lines connected to emitter and collector electrodes of the transistor, respectively.

REFERENCES:
patent: 5384486 (1995-01-01), Konno
Ikuro Aoki, et al., "80GHz AlGaAs HBT Oscillator" IEEE GaAs IC Symposium Digest, pp. 281-284, 1996.

Affiliated with

Also associated with

Rating

Microwave integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1328061