Microwave InP/SiO.sub.2 insulated gate field effect transistor

Details Microwave InP/SiO.sub.2 insulated gate field effect transistor Microwave InP/SiO.sub.2 insulated gate field effect transistor

1979-05-21

1980-03-18

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156DIG70, 427 87, 427 89, 427 93, 01L 2978, H01L 2978, H01L 21316

Patent

active

041940210

ABSTRACT:
An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.

REFERENCES:
patent: 3700978 (1972-10-01), North et al.
patent: 3821777 (1974-06-01), James
patent: 4033286 (1977-07-01), Chern et al.
patent: 4098923 (1978-07-01), Alberti et al.
Clarke et al., "The Preparation of High Purity Epitaxial InP" Solid State mmunications, vol. 8, No. 14, pp. 1125-1128, 1970.
Messick, "InP/SiO.sub.2 MIS Structure", Journal of Applied Physics, vol. 47, No. 11, Nov. 1976.

Affiliated with

Also associated with

Rating

Microwave InP/SiO.sub.2 insulated gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave InP/SiO.sub.2 insulated gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave InP/SiO.sub.2 insulated gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1124529