Microwave InP/SiO.sub.2 insulated gate field effect transistor

Details Microwave InP/SiO.sub.2 insulated gate field effect transistor Microwave InP/SiO.sub.2 insulated gate field effect transistor

1977-10-27

1979-07-17

Wojciechowicz, Edward J.

357 58, 357 61, H01L 2978

Patent

active

041617398

ABSTRACT:
An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.

REFERENCES:
patent: 3700978 (1972-10-01), North et al.
patent: 3821777 (1974-06-01), James
IEEE Transactions on Electron Devices, Jun. 1975, pp. 357-358--Maloney et . l

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