Patent
1980-07-28
1982-09-07
Edlow, Martin H.
357 4, 357 16, H01L 2714
Patent
active
043486860
ABSTRACT:
A detector and/or mixer of electromagnetic energy in the microwave-infrared region of the electromagnetic spectrum comprised of a body of semiconductor material having a superlattice region consisting of, for example, InAs - GaSb wherein the thickness of alternating epitaxial planar layers is in the range of 30A to 80A. Incident radiation perpendicular to the planar regions results in an electric field being provided in the plane of the layers which causes a reduction in the superlattice bandwidth and accordingly an increase in the transverse effective mass of the carriers. This results in a decrease in the perpendicular conductivity through the superlattice region.
REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 3626328 (1971-12-01), Esaki et al.
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4137542 (1979-01-01), Chang et al.
patent: 4163238 (1979-07-01), Esaki et al.
Chin-An Chang, R. Ludeke, L. L. Chang, and L. Esaki, "Molecular-Beam Epit (MBE) of In.sub.1-x Ga.sub.x As and GaSb.sub.1-y As.sub.y " Applied Physics Letters, vol. 31, No. 11, Dec. 1, 1977, pp. 759-761.
Esaki Leo
Sai-Halasz George A.
Carroll J.
Dougherty Anne V.
Edelberg Nathan
Edlow Martin H.
Murray Jeremiah G.
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