Microwave heterojunction bipolar transistors suitable for low-po

Details Microwave heterojunction bipolar transistors suitable for low-po Microwave heterojunction bipolar transistors suitable for low-po

1991-07-31

1995-08-29

Sotomayor, John B.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257198, H01L 3922, H01L 2906

Patent

active

054462940

ABSTRACT:
Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor.
Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4868613 (1989-09-01), Hirachi
patent: 4939562 (1990-07-01), Alderstein
patent: 5041882 (1991-08-01), Katoh
patent: 5097312 (1992-03-01), Bayraktaroglu
Miura, et al., "InAlAs/InGaAs HBT's Using magnesium P-type Dopant," International Electron Devices Meeting 1990, Dec. 9-12, 1990, pp. 681-684.
Wang, et al., "Design Optimization of Microwave Power Heterojunction Bipolar Transistor Cells," IEEE 1989 MTT-S International Microwave Symposium Digest, vol. 3, Jun. 13-15, 1989, pp. 1061-1064.
Singh, et al., "Air Bridge and Via Hole Technology for GaAs Based Microwave Devices," Microelectronics Journal, vol. 19, No. 5, 1988, pp. 23-27.
Wang, et al., "Design Optimization of Microwave Power Heterojunction Bipolar Transistor Cells", IEEE MTT-S International Microwave Symposium Digest, vol. 1, Jun. 13, 1989, pp. 1061-1065.
Singh, et al., "Air Bridge and Via Hole Technology for GaAs Based Microwave Devices", Microelectronics Journal, vol. 19, No. 5, Sep. 1988, pp. 23-27.

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