Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1994-08-17
1996-06-18
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257571, 257579, 257623, 257773, H01L 310328
Patent
active
055280609
ABSTRACT:
Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter, a base 50 and a collector 70 is disclosed, wherein the emitter composed of one or more islands 30 of semiconductor material having a wider energy bandgap than the base 50. The islands 30 are formed so that they do not cross any boundaries of the active area 60 of the transistor.
Other devices, systems and methods are also disclosed.
REFERENCES:
patent: 3444443 (1969-05-01), Moroshima
patent: 4868613 (1989-09-01), Hirachi
patent: 5041882 (1991-08-01), Katoh
patent: 5063427 (1991-11-01), Tully et al.
patent: 5097312 (1992-03-01), Bayraktaroglu
Wang, et al., "Design Optimization of Microwave Power Heterojunction Bipolar Transistor Cells", IEEE MTT-S International Microwave Symposium Digest, vol. I, Jun. 13, 1989, pp. 1061-1065.
Singh, et al., "Air Bridge and Via Hole Technology for GaAs Based Microwave Devices", Microelectronics Journal, vol. 19, No. 5, Sep. 1988, pp. 23-27.
Donaldson Richard L.
Kesterson James C.
Skrehot Michael K.
Texas Instruments Incorporated
Wojciechowicz Edward
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