Microwave GaAs FET amplifier circuit

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

330 31, 330 35, 330 40, H03F 316

Patent

active

040115186

ABSTRACT:
A network is coupled to the gate electrode of a FET for generating a negative gate electrode voltage having a selected nominal value for minimizing intermodulation distortion of the FET and/or a value varying with respect to the nominal value directly proportional to temperature changes to provide a constant gain for the FET.

REFERENCES:
patent: 3382445 (1968-05-01), Williams et al.
patent: 3514710 (1970-05-01), Janning
patent: 3517325 (1970-06-01), Blackmer
patent: 3525050 (1970-08-01), Wolf et al.
patent: 3541234 (1970-11-01), Austin
patent: 3716730 (1973-02-01), Cerny
Electronics, Oct. 31, 1966, p. 19.
Ruth, "GaAs Diode Combines Gunn, Field Effects," The Electronic Engineer, r., 1967, p. 23.
Phalan, "Boost FET Amplifier Gains," Electronic Design 19, Sept. 13, 1967, pp. 98-102.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microwave GaAs FET amplifier circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave GaAs FET amplifier circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave GaAs FET amplifier circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1409071

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.