Microwave field effect transistor

Details Microwave field effect transistor Microwave field effect transistor

1984-11-29

1989-06-27

Clawson, Jr., Joseph E.

357 68, 357 76, 357 81, 357 55, H01L 2980

Patent

active

048434400

ABSTRACT:
Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments thereof. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes establish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad.

REFERENCES:
patent: 4135168 (1979-01-01), Wade
patent: 4183041 (1980-01-01), Goel
patent: 4380022 (1983-04-01), Yoder
K. Honjo et al., "Bruad-Band Int. Match of Micro Power GaAs Fetz" IEEE Trans. on Micro. Tha Tech., vol. MTT-23 #1, Jan. 1979, pp. 3-8.
M. Fukuta et al., "GaAs Microwave Power Fet, " IEEE Trans. on Elec. Oev., vol. Ed-23 #4, Apr. 1976, pp. 388-394.
R. Camisa et al., "A Mounting Structure for GaAs FET's Providing Increased Gain," RCA Tech. Notes, #1176, 3-17-77, 2 pages.

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