Oscillators – Solid state active element oscillator – Transistors
Patent
1978-07-24
1980-02-19
Grimm, Siegfried H.
Oscillators
Solid state active element oscillator
Transistors
331 99, 331115, 331177V, H03B 508, H03B 706
Patent
active
041896882
ABSTRACT:
First and second field effect transistors (FETs) each have a gallium arsenide substrate with an N-type active region that carries first and second electrodes in ohmic contact therewith and a gate electrode. The FETs are mounted in a flip-chip carrier that connects the first electrodes to ground. The FETs are biased to cause a current to flow from the first to second electrodes, whereby the first and second electrodes serve as drains and sources, respectively, of the FETs. The gate of the first FET is connected to a resonator. Additionally, a matching network connects the source of the first FET to the gate of the second FET. The matching network and the biasing of the first FET cause the gate input impedance thereof to be of a negative value that compensates for losses in the resonator. A load connected to the source of the second FET and the bias voltage cause the second FET to have a gate input impedance of a negative value that causes oscillation.
REFERENCES:
patent: 3421111 (1969-01-01), Boyajian
patent: 3516021 (1970-06-01), Kohn
patent: 4135168 (1979-01-01), Wade
Abe et al., "A High-Power Microwave GaAs FET Oscillator", NEC Research and Development, No. 45, Apr. 1977, p. 58.
Wade, "X-Band Reverse Channel GaAs FET Power VCO", Microwave Journal, vol. 21, No. 4, Apr. 1978, p. 72.
Huang et al., "Thermal Resistance of GaAs Power FETs", Proceedings of the Sixth Biennial Cornell Electrical Engineering Conference, 1977, p. 297.
Camisa Raymond L.
Sechi Franco N.
Cohen Samuel
Grimm Siegfried H.
Lazar Joseph D.
RCA Corporation
Smiley Raymond E.
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