Microwave FET power circuit

Details Microwave FET power circuit Microwave FET power circuit

1978-07-24

1980-02-19

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330307, 331108C, 331117R, H03F 3193, H03F 3195, H03B 512

Patent

active

041896823

ABSTRACT:
A field effect transistor (FET) is comprised of a plurality of unit transistors having a common gallium arsenide substrate with an N-type active region. Each unit transistor is comprised of a unit gate, a unit drain and a unit source. The FET is mounted in a flip-chip carrier that connects all of the unit sources together to form a first electrode of the FET. Additionally, the first electrode is connected to ground by the carrier. All of the unit drains are connected together on the substrate to form a second electrode of the FET. The FET is reverse biased to cause a current to flow from the first electrode to the second electrode, whereby the first and second electrodes are a drain and a source, respectively, of the FET.

REFERENCES:
patent: 3716730 (1973-02-01), Cerny
patent: 3965437 (1976-06-01), Kim
patent: 4135168 (1979-01-01), Wade
Wade, "X-Band Reverse Channel GaAs FET Power VCO", Microwave Journal, vol. 21, No. 4, Apr. 1978, p. 92.

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