Microwave-enhanced sputtering configuration

Details Microwave-enhanced sputtering configuration Microwave-enhanced sputtering configuration

1993-08-17

1996-07-02

Breneman, R. Bruce

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429808, 20429816, 20429817, C23C 1434

Patent

active

055318770

ABSTRACT:
The invention relates to a microwave-enhanced sputtering configuration. In this sputtering configuration a magnetron cathode is disposed in a housing whose target opposes a substrate. At both sides of the target is provided in each instance a microwave inlet comprising a waveguide coupled with a cavity resonator. The waveguide is implemented so that the microwave extends parallel to the target surface. Around the target is looped a first magnet coil generating a first magnetic field, while around an L-shaped end of the waveguide is looped a second magnet coil.

REFERENCES:
patent: 4604180 (1986-08-01), Hirukawa et al.
patent: 4610770 (1986-09-01), Saito et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4971674 (1990-11-01), Hata
patent: 5006219 (1991-01-01), Latz et al.
patent: 5196105 (1993-03-01), Feuerstein et al.
patent: 5230784 (1993-07-01), Yoshida
JP Patent Abstracts of Japan: 62-170475 A, C-469, Jan. 16, 1988, vol. 12, No. 15.
63--297557 A, C-581, Apr. 4, 1989, vol. 13, No. 134.

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