Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-03-28
1996-04-30
Kunemund, Robert
Coating apparatus
Gas or vapor deposition
With treating means
118723MA, 118723ME, 118723MR, 118744P, C23C 1600
Patent
active
055121020
ABSTRACT:
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.
REFERENCES:
patent: 4183780 (1980-10-01), McKenna
patent: 4282267 (1981-12-01), Kuyel
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4438368 (1984-03-01), Abe et al.
patent: 4461783 (1984-04-01), Yamazaki
patent: 4481229 (1984-11-01), Suzuki
patent: 4522674 (1985-06-01), Ninomiya
patent: 4532199 (1985-07-01), Ueno
patent: 4544423 (1985-11-01), Tsuge
patent: 4564997 (1986-05-01), Matsuo
patent: 4624736 (1986-07-01), Gee
patent: 4636401 (1987-01-01), Yamazaki et al.
patent: 4645684 (1987-04-01), Osada
patent: 4668365 (1987-09-01), Foster
patent: 4687544 (1987-08-01), Bersin
patent: 4726963 (1988-10-01), Ishihara
patent: 5110619 (1992-07-01), Ogumi et al.
patent: 5230931 (1993-07-01), Yamazaki
patent: 5283087 (1994-02-01), Yamazaki
Chang Joni Y.
Kunemund Robert
Semiconductor Energy Laboratory Co,. Ltd.
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