Microwave enhanced CVD method for depositing a boron nitride and

Details Microwave enhanced CVD method for depositing a boron nitride and Microwave enhanced CVD method for depositing a boron nitride and

1989-03-29

1990-11-27

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 35, 427 451, 427 47, 4272552, 4272551, 118723, B05D 306

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active

049734946

ABSTRACT:
A cyclotron resonance chemical vapor deposition method of making a boron nitride or a boron nitride in combination with carbon on a substrate, characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is substantially positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.

REFERENCES:
patent: 3335345 (1967-08-01), Diefendrof
patent: 4743522 (1988-05-01), Iino et al.
patent: 4816291 (1989-03-01), Desphandey et al.
patent: 4869923 (1989-09-01), Yamazaki
Pickett, "Thin Superlattices and Band-Gap Discontinuities: The (110) Diamond-Boron Nitride Interface", Phys. Rev. B, vol. 38 (2), Jul. 1988, pp. 1316.varies.1322.
Kawarada et al., "Large Area Chemical Vapor Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma", Jpn. J. Appl. Phys., 26(6), Jun. 1987, L 1032-1034.

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