Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2005-02-08
2005-02-08
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S665000, C257S692000, C257S104000, C257S780000, C333S247000
Reexamination Certificate
active
06853073
ABSTRACT:
The present invention relates to a microwave electronic device (1) comprising a metal enclosure (2) having a bottom (21) and a lid (23) and containing an electronic circuit board (3) disposed substantially parallel to said bottom and to said lid, said circuit board having:conductive bottom and top grounding layers (41, 42) respectively disposed on bottom and top faces (31, 32) of the circuit board, andperforations (7a) transverse to said faces of the circuit board and delimited by conductive walls (71) for electrically interconnecting said layers (41, 42).At least some of said walls (71) are electrically connected to the lid of the enclosure by conductive grounding members (8a). Each conductive member (8a) has a metal blade covered with a material (13, 13′) for absorbing microwaves.
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Yook J-G et al: “Experimental and Theoretical Study of Parasitic leakage/Resonance in a K/KA-Band MMIC Package” IEEE Transactions on Microwave Theory and Techniques, IEEE Inc. New York, US, vol. 44, No. 12, Part 2, Dec. 1, 1996, pp. 2403-2409, XP000636422.
Baillargeat Dominique
Pillet Didier
Thon Benjamin
Verdeyme Serge
Avanex Corporation
Moser, Patterson & Sheridan, L.L.
Thomas Tom
Warren Mathew E.
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