Microwave diode with high resistance layer

Details Microwave diode with high resistance layer Microwave diode with high resistance layer

1979-06-07

1981-11-17

Larkins, William D.

Wave transmission lines and networks

Dissipating terminations for long lines

Fluid-cooling

333104, 333247, 357 51, 357 58, H01P 115, H01P 308

Patent

active

043014291

ABSTRACT:
A microwave diode having an integrally formed fixed resistance layer to provide a monolithic structure. The resistance layer has an approximate value of 50-ohms when the diode is in the forward biased state. The diode in monolithic form is adaptable to be soldered directly to a housing electrically connected to the ground plane of the microstrip circuit. In the reverse bias state the junction capacitance of the structure is small enough, typically 0.02 to 0.05 pf, to isolate the diode from the microstrip circuit thereby minimizing the insertion loss of the device. Packaged varieties of the monolithic structure are applicable to stripline, coaxial and waveguide microwave circuits.

REFERENCES:
patent: 3219891 (1965-11-01), Benedict
patent: 3260900 (1966-07-01), Shombert
patent: 3780322 (1973-12-01), Walters
patent: 4127830 (1978-11-01), Chalifour et al.

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