Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2007-01-09
2007-01-09
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S664000, C257S691000
Reexamination Certificate
active
10803165
ABSTRACT:
The present invention relates to a microwave device for at least one of dissipating and attenuating power, the device comprising:an insulating substrate;at least one conductive strip of a microwave transmission line on a face of the substrate;at least one ground zone; andat least one resistive layer placed on said face of the substrate, the resistive layer having at least a first region to which the conductive strip(s) is connected and a second region connected to the ground zone, the resistive layer presenting a longitudinal axis;in which device:the resistive layer is covered at least in part by a ground plane connected to the ground zone and insulated from the resistive layer by an insulating layer;wherein said ground plane comprises a conductive material silkscreen printed on the insulating layer.
REFERENCES:
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patent: 4711835 (1987-12-01), Dufour
patent: 4965538 (1990-10-01), Mickey, III
patent: 5822196 (1998-10-01), Hastings et al.
patent: 6875671 (2005-04-01), Faris
Patent Abstracts of Japan, vol. 1997, No. 02, Feb. 28, 1997 & JP 08 279704 A (Advantest Corp), Oct. 22, 1996.
Patent Abstracts of Japan, vol. 016, No. 385 (E-1249), Aug. 17, 1992 & JP 04 125903 A (Hirose Electric Co Ltd), Apr. 27, 1992.
Boillot Laurent
Fournier Andre
Parekh Nitin
Radiall
Schweitzer Cornman Gross & Bondell LLP
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