Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1994-07-06
1996-06-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257259, 257280, 257773, H01L 2980
Patent
active
055258190
ABSTRACT:
A Concentric MESFET (CMESFET) is a small-signal traveling-wave transistor having a grounded source electrode which concentrically surrounds and shields the gate and drain electrodes from electromagnetic fields generated by other nearby circuit elements. S-parameters for the transistor are computed to obtain gain curves for design configurations. For a gate length of 2 um, maximum gain occurs with a gate width of 3.0 mm. The CMESFET has calculated bandwidth of 17 GHz for a 2 um gate length and a gate width of 300 m. Coupling capacitance between device electrodes and a nearby transmission line are calculated and used to verify improved source electrode shielding isolation of the device from interference and crosstalk originating in surrounding circuits.
REFERENCES:
patent: 5313083 (1994-05-01), Schindler
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Bowers Courtney A.
Burke William J.
Crane Sara W.
Reid Derrick M.
The Aerospace Corporation
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