Microwave cathode sputtering arrangement

Details Microwave cathode sputtering arrangement Microwave cathode sputtering arrangement

1989-09-28

1991-04-09

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429819, C23C 1435

Patent

active

050062190

ABSTRACT:
The invention relates to a microwave cathode sputtering arrangement in which a cathode is disposed opposite a substrate. In the immediate vicinity of the substrate is located at least one magnetic field whose strength leads to an electron cyclotron resonance.

REFERENCES:
patent: 4422896 (1983-12-01), Class et al.
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4774437 (1988-09-01), Helmer et al.
D. M. Goebel et al., "Plasma Surface Interaction Experimental Facility (Pisces) for Materials and Edge Physics Studies," Journal of Nuclear Materials, vol. 121, (1984), pp. 277-282.
Patents Abstracts of Jan. 25, 1983, vol. 7, No. 19, C-147, (57-174466A).
K. Suzuki et al., "The Roles of Ions and Neutral Active Species in Microwave Plasma Etching," Journal of Electrochemical Society: Solid-State Science and Technology, Jun. 1979, vol. 126. No. 6, pp. 1024-1028.

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