Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1985-09-17
1987-06-16
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 156646, 204298, H01L 21306, B44C 122
Patent
active
046734562
ABSTRACT:
A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.
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Borel Richard A.
Hoff Andrew M.
Linxwiler Kenneth E.
Spencer John E.
Machine Technology, Inc.
Powell William A.
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