Wave transmission lines and networks – Coupling networks – Delay lines including long line elements
Patent
1985-12-12
1986-12-16
Nussbaum, Marvin L.
Wave transmission lines and networks
Coupling networks
Delay lines including long line elements
333161, 333246, H01P 118, H01P 1185
Patent
active
046300112
ABSTRACT:
A variable phase shifter based on the slow-wave effect for operation in the millimeter wave region, comprising a GaAs substrate for mechanical support; an n.sup.+ doped semiconductor layer disposed on the GaAs substrate for operation as a first ground plane; an n doped semiconductor layer disposed on the n.sup.+ semiconductor layer with a thickness to permit only one mode at millimeter wave frequencies to propagate, while suppressing higher order millimeter wave modes; and a Schottky metal microstrip with first and second ends disposed on top of the n doped semiconductor layer. Means are provided in the form of ohmic contacts for electrically connecting the n.sup.+ semiconductor layer to ground electrical potential. These ohmic contacts are disposed on top of the n doped layer, but are provided with a very large surface area contact to the n doped layer in order to significantly reduce the resistance between the ohmic contact and to the n.sup.+ semiconductor layer. Means are included for providing an electrical bias voltage between the Schottky metal microstrip and the n.sup.+ doped layer. The propagating phase velocity of millimeter waves propagating along the Schottky metal microstrip can be varied in accordance with the bias voltage to obtain a desired phase shift between the first and second ends of the metal microstrip. In one embodiment, a metallic second ground plane is disposed on the other face of the semiconductor substrate. In a preferred embodiment, the n doped semiconductor layer is approximately 2 microns or less in thickness.
REFERENCES:
Publication, Kennis and Faucon, "Rigorous Analysis of Planar MIS Transmisn Lines," Electronic Letters, Jun. 25, 1981, vol. 17, No. 13, pp. 453-457.
Publication, Shih and Itoh, "Analysis of Printed Transmission Lines for Monolithic Integrated Circuits," Electronics Letters, Jul. 8, 1982, vol. 18, No. 14, pp. 584-586.
Publication, Dieter Jager, "Slow-Wave Propagation Along Variable Schottky-Contact Microstrip Line," IEEE Transactions on Microwave Theory & Techniques, vol. MTT 24, No. 9, Sep. 1976, pp. 566-573.
Publication, C. M. Krowne, "Slow Wave Propagation in Two Types of Cylindrical Waveguides Loaded With a Semiconductor," IEEE Transactions on Microwave Theory & Techniques, vol. MTI-33, No. 4, Apr. 1985, pp. 335-339.
Publication, Hughes and White, "Microwave Properties of Nonlinear MIS and Schottky-Barrier Microstrip," IEEE Transactions on Electron Devices, vol. ED-22, No. 10, Oct. 1975, pp. 945-956.
Publication, "Properties of Microstrip Line on Si-SiO.sub.2 System," IEEE Transactions on Microwave Theory & Techniques, vol. MTT-19, No. 11, Nov. 71, pp. 869-881, Hasegawa et al.
Publication, C. M. Krowne, "Slow Wave Propagation in Generalized Cylindrical Waveguides Loaded With a Semiconductor," 1983 IEEE MTT-S Digest, May 31-Jun. 3, pp. 402-404.
Publication, Hasegawa et al., "Slow Wave Propagation Along a Microstrip Line on Si-SiO.sub.2 Systems," Proceedings of the IEEE, 1970, pp. 297-299.
Krowne Clifford M.
Neidert Robert E.
Beers Robert F.
Ellis William T.
Nussbaum Marvin L.
Sheinbein Sol
The United States of America as represented by the Secretary of
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