Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1999-06-15
2000-10-10
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 53, H03F 360
Patent
active
061305804
ABSTRACT:
By connecting a grounding conductor pattern directly to a grounding terminal of a field-effect transistor and connecting a series circuit comprising a stabilized resistor and an open-circuit stub having a length equal to quarter of a parallel resonance frequency, undesirable parallel resonance caused by the grounding conductor pattern and the open-circuit stub is suppressed, and a voltage drop in the stabilized resistor is suppressed when a bias voltage is applied to the field-effect transistor. Accordingly, the operation of a microwave amplifier is stabilized.
REFERENCES:
patent: 5172074 (1992-12-01), Shiga
patent: 5642080 (1997-06-01), Whang et al.
patent: 6011446 (2000-01-01), Woods
Nakayama, M., Technical Report of IEICE, The Institute of Electronics Information and Communication Engineers, "Low-Noise Amplifier Using Directly Cooled HEMTs", Feb. 1993, pp. 49-54.
Itoh Yasushi
Ohshima Takeshi
Uchida Hiromitsu
Mitsubishi Denki & Kabushiki Kaisha
Mottola Steven J.
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