Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1993-07-21
1995-11-21
Sikes, William L.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330302, 330303, 330306, H03F 102, H03F 360
Patent
active
054691079
ABSTRACT:
A microwave amplifier includes a field effect transistor having its source grounded. The drain of the transistor is connected through a first inductor of gold wires to an output-side matching circuit, while the gate of the transistor is connected through a second inductor of gold wires to an input-side matching circuit. A series circuit including a capacitor and a third inductor is disposed near the input-side matching circuit and is connected between the junction of the input-side matching circuit and the second inductor and a reference potential.
REFERENCES:
patent: 4658220 (1987-04-01), Heston et al.
patent: 4859633 (1989-08-01), Bayraktaroglu
patent: 5023993 (1991-07-01), Fengelly
patent: 5146178 (1992-09-01), Nojima et al.
Miller et al, "7-18 GHz GaAs FET Monolithic Power Amplifiers", GaAs IC Symposium, Nov. 1982, pp. 139-141.
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
Sikes William L.
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