Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1998-02-23
1999-12-07
Lee, Benny
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330302, 333176, H03F 360
Patent
active
059990589
ABSTRACT:
A microwave amplifier includes an FET, a DC bias voltage supply circuit, and a beat smoothing circuit. The FET amplifies a microwave signal including a plurality of carrier frequencies that are different from each other. The DC bias voltage supply circuit supplies a DC bias voltage to the FET. The beat smoothing circuit removes a beat frequency generated on a line connected to the FET due to a difference among the plurality of carrier frequencies. The beat smoothing circuit is constituted by a microstrip line having a low impedance with respect to the beat frequency, and a capacitor for short-circuiting to ground the beat frequency output from the filter means.
REFERENCES:
patent: 4591803 (1986-05-01), Saleh
patent: 4803443 (1989-02-01), Takagi et al.
patent: 4994761 (1991-02-01), Craft
patent: 5272450 (1993-12-01), Wisherd
patent: 5274341 (1993-12-01), Sekine et al.
patent: 5276406 (1994-01-01), Samay et al.
patent: 5329249 (1994-07-01), Cripps
patent: 5357213 (1994-10-01), Michel et al.
patent: 5412347 (1995-05-01), Minnis
patent: 5592122 (1997-01-01), Masahiro et al.
patent: 5745857 (1998-04-01), Maeng et al.
patent: 5812221 (1998-09-01), Davis et al.
Agu Shuichirou
Saitou Shigeru
Lee Benny
NEC Corporation
Nguyen Khanh Van
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