Microstructures which provide superlattice effects and one-dimen

Details Microstructures which provide superlattice effects and one-dimen Microstructures which provide superlattice effects and one-dimen

1989-03-27

1991-06-11

Jackson, Jr., Jerome

357 55, 357 63, H01L 2712

Patent

active

050236717

ABSTRACT:
Quantum mechanical effect devices incorporate means for interrupting the two-dimensional carrier gas of a modulation doped structure to produce periodic potential variations which provide superlattice-like effects on current flowing nearby. The modulation doped structures incorporate specialized structures displaced from a current path which simultaneously confine the two-dimensional carrier gas into a quasi-one-dimensional carrier gas and subject the thus confined carrier gas and current flowing therein to superlattice-like effects by inducing periodic potential variations along the current path. The induced variations are produced by etching corrugations in the device edges or by forming them in biasing gates.

REFERENCES:
patent: 4758868 (1988-07-01), Frijink
Yasuhiro Tokura; Conductivity Oscillation Due to Quantum Interference in a Proposed Washboard Transistor Appl. Phys. Lett. 51(22) Nov. 30, 1987, pp. 1807-1808.
"Quasi One Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure", Jap. Journal of Appl. Phys., Dec. 1988, L2424, L2426; Okada et al.
"Heterostructure Traveling Wave Transistor", IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1989, pp. 150-152, F. F. Fang et al.
"Negative Transconductance and Negative Differential Resistance in a Grid-Gate Modulation-Doped Field-Effect Transistor", appl. Phys. Lett. 54(5) Jan. 1989 by K. Ismail et al., pp. 460-462.
"Conductivity Oscillation Due to Quantum Interference in a Proposed Washboard Transistor", Appl. Phys. Lett. 51(22) Nov. 30, 1987, pp. 1807-1808, Y. Tokura et al.
"Fabrication of Quantum Wires in GaAs/AlGaAs Heterolayers", by S. Thomas et al., Journal of Vac. Soc. & Technology, B6(1), Jan./Feb. 1988, p. 127.
"Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors", by H. Sakaki, Japanese Journal of App. Phys., vol. 28, #2, Feb. 1989, pp. L314-L316.
"Quasi-one-dimensional Electron States in a Split-Gate GaAs/AlGaAs Heterostructure", by S. E. Laux et al., Surface Science 196 (1988) 101-106 Mar. 1988.
"Surface-Superlattice Effects in a Grating-Gate GaAs/GaAlAs Modulation Doped Field-Effect Transistor", by K. Ismail et al., Appl. Phys. Lett. 52(13) 3/28/88, p. 1071.

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