Microstructures and high temperature isolation process for fabri

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437228, 437921, 437919, H01L 2144

Patent

active

054260701

ABSTRACT:
A method of fabricating released microelectromechanical and microoptomechanical structures having electrically isolating segments from single crystal silicon includes thermal oxidation steps. The structures are defined using a single mask patterning process, and the structure is partially thermally oxidized. This is followed by a second masking step which is used to define segments to be completely thermally oxidized, and a second oxidation step completes the fabrication of the isolating segment. Thereafter the structure is released from the underlying substrate.

REFERENCES:
patent: 3672985 (1972-06-01), Nathanson et al.
patent: 3835338 (1974-09-01), Martin
patent: 4381672 (1983-05-01), O'Connor et al.
patent: 4437226 (1984-03-01), Soclof
patent: 4522682 (1985-04-01), Soclof
patent: 4670092 (1987-06-01), Motamedi
patent: 4685198 (1987-08-01), Kawakita et al.
patent: 4706374 (1987-11-01), Murakami
patent: 4740410 (1988-04-01), Muller et al.
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4772928 (1988-09-01), Dietrich et al.
patent: 4776924 (1988-10-01), Delapierre
patent: 4783821 (1988-11-01), Muller et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 4851080 (1989-07-01), Howe et al.
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4867842 (1989-09-01), Bohrer et al.
patent: 4980317 (1990-12-01), Koblinger et al.
patent: 4981552 (1991-01-01), Mikkor
patent: 5045152 (1991-09-01), Sickafus
patent: 5068203 (1991-11-01), Logsdon et al.
patent: 5072288 (1991-12-01), MacDonald et al.
patent: 5126812 (1992-06-01), Greiff
patent: 5149673 (1992-09-01), MacDonald et al.
patent: 5156988 (1992-10-01), Mori et al.
patent: 5179499 (1993-01-01), MacDonald et al.
patent: 5198390 (1993-03-01), MacDonald et al.
patent: 5235187 (1993-08-01), Arney et al.
Wilson et al., "Highly Selective, High Rate Tungsten Deposition", Materials Research Society, 1985, pp. 35-43.
Zhang et al., "An RIE Process for Submicron, Silicon Electromechanical Structures", IEEE, May 24, 1991, pp. 520-523.
Arney et al., "Formation of Submicron Silicon-on-Insulator Structures by Lateral Oxidation of Substrate Silicon Islands", J. Vac. Sci. Technol. B 6(1), Jan./Feb. 1988, pp. 341-345.
Zhang et al., "A RIE Process for Submicron, Silicon Electromechanical Structures", IOP Publishing Ltd., 1992, pp. 31-38.
"Fabrication of High Frequency Two-Dimensional Nanoactuators for Scanned Probe Devices", Yao et al. Journal of Microelectromechanical Systems, vol. 1, No. 1, Mar. 1992, p. 14-2.
"New SOI CMOS Process with Selective Oxidation" Kubota et al. IEDM 86, pp. 814-816.
"Nanostructures in Motion" Yao et al., Nanostructures and Mesoscopic Systems Wiley P. Kirk and Mark Reed, Eds. Academic Press, Dec. 1991; pp. 1-9.
Zhang and MacDonald; "An rie process for submicron, silicon electromechanical structures"; May 1991; pp. 520-523.
Lutze, Perera & Krusius; Anisotropic Reactive Ion Etching of Aluminum Using CI.sub.2, BC.sub.3, and CH.sub.4 Gases; Jan. 1990; J. Electrochem. Soc., vol. 137, No. 1.
Susanne C. Arney and Noel C. MacDonald; Formation of submicron silicon-on-insulator structures by lateral oxidation of substrate-silicon islands; Dec. 1987; pp. 341-345.
Mele, Arney, Krusius, and MacDonald; Anisotropic Reactive Ion Etching of MoSi.sub.2 and In Situ Doped n+ and p+ Polysilicon Using CI.sub.2 and BCI.sub.3 ; J. Electrochem. Soc., vol. 135, No. 9.; Sep. 1988; pp. 2373-2378.
Wolf, S., Silicon Processing for the VLSI Era:vol. 2 Process Integration, John Wiley & Sons, N.Y., 1990, pp. 54-6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microstructures and high temperature isolation process for fabri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microstructures and high temperature isolation process for fabri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microstructures and high temperature isolation process for fabri will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1843985

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.