Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-16
2008-09-23
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S019000, C257S065000
Reexamination Certificate
active
07427779
ABSTRACT:
The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si1-XfGeXftype, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon on insulator substrate and a first initial layer of silicon and germanium alloy of Si1-X1GeX1type, with X1 strictly comprised between 0 and Xf. The stack also comprises a second initial layer of silicon and germanium alloy of Si1-X2GeX2type, with X2 comprised between a first value that is not zero and 1, and an intermediate layer, preferably made of silicon oxide or silicon nitride, that is able to remain amorphous during formation of the substrate and that is intercalated between the first initial layer of Si1-X1GeX1and the second initial layer of Si1-X2GeX2.
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Costa Rémi
Damlencourt Jean-Francois
Commissariat a l''Energie Atomique
Menz Douglas M
Oliff & Berridg,e PLC
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